About this Journal  |  Author Guidelines  |   Submit a Manuscript     

International Journal of Energy Technology and Management

Volume 1, No. 2, 2017, pp 17-22
http://dx.doi.org/10.21742/ijetm.2017.1.2.03

Abstract



A Review on Various Leakage Power Reduction Techniques in Deep Submicron Technologies in CMOS VLSI Circuits



    Aloka Tamta and Rachna Arya
    BTKIT Dwarahat, Alomora

    Abstract

    The production of circuit designs operating at low voltage for low power consumption is increasing as the market demand for efficient portable electronic equipments is increasing. Reduction in supply voltage leads to sub-threshold leakage current which is one of the main reason for static power consumption. Leakage power consumption is a major contribution of total power dissipation in Deep Sub-Micron (DSM) technology for CMOS circuit design. Leakage Power is determined during the standby mode of operation. In this paper a review of various methods and techniques which are used for reducing the leakage power in VLSI circuits is shown. The various leakage reduction techniques included are: MTCMOS, VTCMOS,Stack Effect, Sleepy Stack, LECTOR Approach, GALEOR Approach.


 

Contact Us

  • PO Box 5074, Sandy Bay Tasmania 7005, Australia
  • Phone: +61 3 9028 5994