Analysis of Oscillation Condition of CMOS Oscillation Network Using Tri-State Circuit

AUTHORS

Hyun-soo Kim,Dept. of Electronic Engineering, Hallym University, 1 Hallymdaehak-gil, Chuncheon, Gangwon-do, KOREA
Sung-Gu Kim,Research Institute of Informatic and Electronic Engineering, Hallym University 1, Hallymdaehak-gil, Chuncheon, Gangwon-do, KOREA
Gyu Moon,

ABSTRACT

We propose a GHz-band cellular oscillation / non-oscillation network circuit design with tri-state addition. An oscillator that can be used as a high-speed clock signal generator / distributor has a structure composed of a plurality of cells of a simple ring oscillator type. When tri-state is added, oscillation / non-oscillation can be controlled by enable signal, and power consumption is minimized through LPM mode and shutdown mode as well as synchronization problem due to delays between ultra-high speed semiconductor clock signals. In the CON structure, the number of tri-state requests is compared for three cases and the minimum required number is obtained. The simulation of the spectral characteristic curve of an oscillator with a 3.5V 0.46um CMOS N-well parameter parameter was verified and the maximum frequency was measured at 2.78GHz.

 

KEYWORDS

Ring oscillator, CMOS oscillator / distributor, Tri-State, low power

REFERENCES

[1]    Lim Kyung Won, Young Min Yoo, An Hye Min, and Moon Gyu (2011). Design of ㎓ - band Cellular Variable Oscillator Network Circuit Using Voltage Controlled Linear Resistor. Proceedings of IEEK, 327-330.
[2]    Kim Jae-moo, Choi Won-yong, Kim Sung-jin, Heo Gang-in, and Moon Kyu (2013). Design and Characteristics of a Cellular Oscillator for Clock Generation and Distribution for. Proceedings of the IEEK, 158-161.
[3]    Kim Sung-jin, Choi Won-yong, Hee-gang Heo, and Moon Kyu (2014). Ultra-fast speed sensed by CMOS-applied voltage fluctuations A study on ring oscillation network circuit for clock generation. Proceedings of IEEK, 665-668.
[4]    Chung Byeong Gun, Moon Yong (2009). Design of DCO (Digitally Controlled Oscillator) for DAB-T using Tri-state Inverter. Proceedings of the IEEK, 425-426.
[5]    Lee, Jong-duk (1983). NMOS, CMOS fabrication process. Journal of the Institute of Electronics Engineers of Korea.
[6]    Yoo Jong-sun, Kang Jin-young, Lee Man-gu, Lee, Jong-duk (1982). Characteristics of Threshold Voltage in N-channel MOSFETs. Proceedings of the IEEK, 232-234.
[7]    Park, Hong-Jun: CMOS digital integrated circuit design, CMOS analog integrated circuit design
[8]    by Robert L. Boylestad, Louis Nashelsky: Electronic Devices and Circuit Theory
[9]    By Neamen Donald A. Translated by Kwang Ho Kim, Yong Sang Kim, Jung Geun Song: Neamen’s semiconductor properties and device

CITATION

  • APA:
    Kim,H.& Kim,S.G.& Moon,G.(2018). Analysis of Oscillation Condition of CMOS Oscillation Network Using Tri-State Circuit. International Journal of Energy, Information and Communications, 9(3-4), 1-6. 10.21742/IJEIC.2018.9.3-4.01
  • Harvard:
    Kim,H., Kim,S.G., Moon,G.(2018). "Analysis of Oscillation Condition of CMOS Oscillation Network Using Tri-State Circuit". International Journal of Energy, Information and Communications, 9(3-4), pp.1-6. doi:10.21742/IJEIC.2018.9.3-4.01
  • IEEE:
    [1] H.Kim, S.G.Kim, G.Moon, "Analysis of Oscillation Condition of CMOS Oscillation Network Using Tri-State Circuit". International Journal of Energy, Information and Communications, vol.9, no.3-4, pp.1-6, Aug. 2018
  • MLA:
    Kim Hyun-soo, Kim Sung-Gu and Moon Gyu. "Analysis of Oscillation Condition of CMOS Oscillation Network Using Tri-State Circuit". International Journal of Energy, Information and Communications, vol.9, no.3-4, Aug. 2018, pp.1-6, doi:10.21742/IJEIC.2018.9.3-4.01

ISSUE INFO

  • Volume 9, No. 3-4, 2018
  • ISSN(p):2093-9655
  • ISSN(e):2652-1989
  • Published:Aug. 2018

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